Vishay 1200 V SiC MOSFET Power Modules Increase Energy Efficiency in Industrial Applications

Vishay Intertechnology has announced the launch of five new 1200 V Silicon Carbide (SiC) MOSFET power modules, designed to significantly improve energy efficiency in medium- to high-frequency applications. The devices are housed in the industry-standard SOT-227 package, combining high performance with easy integration into existing designs.

Ideal Solutions for Automotive, Energy, Industrial and Telecom Applications

The new VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 power modules are engineered for demanding applications, including:

• Solar inverters

• Off-board chargers for electric vehicles (EVs)

• DC/DC converters and SMPS

• UPS and HVAC systems

• Large-scale energy storage systems

• Telecom power supplies

By leveraging Vishay’s latest-generation SiC MOSFET technology, these modules deliver lower switching losses, higher efficiency, and reliable operation at elevated temperatures.

Advanced Technology with Soft Recovery Body Diode

Available in single switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft recovery body diode, enabling low reverse recovery. This results in reduced switching losses and improved overall system efficiency, particularly in high-frequency power conversion applications.

SOT-227 Package Enables Easy Replacement and Cost Reduction

The SOT-227 package allows the new power modules to function as drop-in replacements for competing solutions already used in existing designs. This enables engineers to adopt the latest SiC technology without modifying PCB layouts, reducing development time and cost.

Additionally, the molded package provides:

• Electrical insulation up to 2500 V for one minute

• No need for additional insulation between the component and the heatsink

• Lower overall system cost

High Electrical and Thermal Performance

Vishay’s SiC power modules offer robust electrical and thermal characteristics:

• Continuous drain current: 50 A to 200 A

• Low RDS(on): down to 12.1 mΩ

• High-speed switching

• Low capacitance

• Maximum junction temperature: +175 °C

• RoHS-compliant

These features make the devices well suited for applications requiring high power density, energy efficiency, and long-term reliability.

Technical Specifications – 1200 V SiC MOSFET Power Modules

Part Number	VDSS	ID	RDS(on)	Configuration	Package
VS-SF50LA120	1200 V	50 A	43 mΩ	Low-side chopper	SOT-227
VS-SF50SA120	1200 V	50 A	47 mΩ	Single switch	SOT-227
VS-SF100SA120	1200 V	100 A	23 mΩ	Single switch	SOT-227
VS-SF150SA120	1200 V	150 A	16.8 mΩ	Single switch	SOT-227
VS-SF200SA120	1200 V	200 A	12.1 mΩ	Single switch	SOT-227

Availability

Samples and production quantities of the VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 are available now, with lead times of approximately 13 weeks.